Our amino metal compounds boast a purity level of up to 5N, making them ideal as precursors for high-k materials. These compounds could be effectively utilized in various deposition techniques such as ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition) to produce nitrogen compounds, oxides, or elemental metals with high dielectric constants.

We supply the following amino metal products:
Pentakis(dimethylamino)tantalum (CAS: 19824-59-0) , is widely used as a precursor for TaN. It exhibits exceptional conductivity, making it suitable for manufacturing the electrode part of semiconductor devices.
Tetrakis(dimethylamino)titanium TDMAT (CAS: 3275-24-9) is serves as a precursor material for TiO2, a crucial high-k and metal gate material in technologies below 32nm.

The applications of these advanced materials are vast and encompass dynamic memory storage, photovoltaic cells, CMOS technology, capacitors, transistors, ferroelectric memory, high-definition display technology, and more. By incorporating our high purity amino metal compounds into your manufacturing processes, you can unlock new possibilities and enhance the performance of your products.

We would be delighted to discuss your specific requirements and provide you with further information on our amino metal compounds. Please feel free to contact us at uchemsales@gmail.com.