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Langmuir

Langmuir

IF: 3.7
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Role of Poly(diallyldimethylammonium chloride) in Selective Polishing of Polysilicon over Silicon Dioxide and Silicon Nitride Films

Published:28 February 2011 DOI: 10.1021/la104257k PMID: 21355593
Naresh K. Penta, P. R. Dandu Veera, S. V. Babu*

Abstract

A cationic polymer, poly(diallyldimethylammonium chloride), or PDADMAC (MW ≈ 200?000), at a concentration of 250 ppm was used to enhance polysilicon removal rates (RRs) to ~600 nm/min while simultaneously suppressing both silicon dioxide and silicon nitride RRs to <1 nm/min, both in the absence or in the presence of ceria or silica abrasives during chemical mechanical polishing (CMP). These results suggest that aqueous abrasive-free solutions of PDADMAC are very attractive candidates for several front-end-of-line (FEOL) CMP processes. Possible mechanisms for the enhancement of poly-Si RR and the suppression of oxide and nitride RRs are proposed on the basis of the RRs, contact angle data on poly-Si films, zeta potentials of polishing pads, polysilicon films, silicon nitride particles, and silica and ceria abrasives, thermogravimetric analysis, and UV?vis spectroscopy data.

Substances (3)

Related products
Procduct Name CAS Molecular Formula Supplier Price
Quartz 14808-60-7 O2Si 621 suppliers $10.00-$6975.05
Cerium dioxide 1306-38-3 CeO2 450 suppliers $26.00-$1565.00
Poly(diallyldimethylammonium chloride) 26062-79-3 C24H54Cl3N3X2 310 suppliers $25.00-$187.00

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